MEMORY INCLUDING RESISTOR BIT-LINE LOADS

摘要

A memory includes a data bit line and a reference bit line. Word lines in the memory are connected to the bit lines by transistors. The transistors on data bit lines and the reference bit lines are substantially the same size. The capacitances on the data bit lines are substantially the same as the capacitances on the reference bit lines. When the word line is activated, the bit lines express a steady-state voltage that is a function of the resistance of the bit lines. In one example, the data bit lines have a resistance (R) and the reference bit lines have half the resistance (R2). The same current is sourced to the data bit lines and the reference bit lines so that the steady-state voltage of the data bit line differs from the steady-state voltage of the reference bit line by a factor equal to the ratio of the resistances. The resistors (R and R2) perform two functions, the resistors clamp level of the bit lines that are being discharged to stop the displacement current. The data bit lines are sensed differentially with respect to the reference.