发明名称 SEMICONDUCTOR DEVICE WIRING AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To minimize deterioration of wiring caused by electromigration for improving a wiring reliability. SOLUTION: A metal wiring layer 26, having a predetermined width is formed on a plug 25a filling a contact hole made in an interlayer insulating layer 22 on a semiconductor substrate. The metal wiring layer 26 is formed in its upper side with grooves to provide a rough surface configuration. Formed on the faces of projections in the rough surface is a first antireflection film 27. Formed on side faces of the wiring layer 26 and on both side faces of the projections in the rough surface is a second antireflection film 29. Since the metal wiring layer has an uneven surface, its heat radiating surface area can be increased, thus enhancing the dissipation effect of Joule heating generated by the wiring. Since the antireflection film is formed on the side faces of the wiring structure and on the side faces of the projections, deterioration of the wiring due to electromigration can be made less.
申请公布号 JPH11195760(A) 申请公布日期 1999.07.21
申请号 JP19980192703 申请日期 1998.07.08
申请人 LG SEMICON CO LTD 发明人 CHAN YON KIM
分类号 H01L27/108;H01L21/02;H01L21/28;H01L21/3213;H01L21/8242;H01L23/528;H01L23/532 主分类号 H01L27/108
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