| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plating device for a wafer in which the tendency that conductive film on a wafer is made thicker as it closes to the region in which conductive pins of a plating jig are brought into contact with the conductive film is prevented, and plating film uniform in film thickness can be formed on the wafer face. SOLUTION: In a plating device for a wafer in which a wafer W mounted on a plating jig 10 provided with a plurality of conductive pins 18 to be brought into contact with conductive film on the wafer W and an anode electrode are oppositely arranged in a plating tank, and the electric current is allowed flow to the space between the anode and the wafer W through the conductive pins 18 to form plating coating on the face of the wafer W, shielding boards 19 composed of dielectric material are fitted to the vicinities of the conductive pins 18 to be brought into contact with the conductive coating on the wafer W.</p> |
