| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a resistance element. SOLUTION: For a semiconductor device 10, an insulation layer 14 composed of a silicon oxide film or the like is provided on the entire upper surface of a semiconductor substrate 12. A resistance element 16 composed of MoSix is formed at the upper part of the insulation layer 14, and an insulation film 22 is provided on the entire surface of the semiconductor substrate 12 at the upper part of the insulation layer 14. A through-hole 24 is formed at the insulation film 22 which is positioned at the upper part of the resistance element 16, and an electrode 26 provided on the upper part of the insulation film 22 is connected electrically to the resistance element 16 via the through-hole 24. |
