| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoresist compsn. suitable for an ArF excimer laser light source, having satisfactory dry etching resistance and suitability to a standard developer and excellent in adhesion to a substrate and high in a resist pattern profile by using a resin contg. a specified polymer and a low molecular carboxylic acid. SOLUTION: This photoresist compsn. contains a polymer in which a resin which increases its alkali solubility for alkali by being decomposed by an acid, contains repeating units of formula I and repeating units of formula II and a low molecular carboxylic acid. In the formulae I and II, R1 -R8 and R1 '-R8 ' may be identical or different and are each H, alkyl which may have a substituent, cyclic hydrocarbon which may have a substituent, halogen, cyano, a group which is decomposed by the action of the acid or -C(=O)-X-A-R9 , m/n is 1/9 to 9/1, m+n and m'+n' are each 10-100, m' is 0-100, n' is 0-100, X is a divalent combining group selected from O, S, -NH- or the like, R9 is -COOH, -CN or the like and A is a single bond, alkylene or the like. |
