发明名称 |
IMPREGNATED NEGATIVE ELECTRODE STRUCTURE, MANUFACTURE THEREOF, ELECTRON GUN STRUCTURE, AND ELECTRON TUBE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a impregnated negative electrode structure capable of conducting low temperature operation and high current density operation, of a long service life, and of a fast surface scandium concentration restoration time after an ion bombardment. SOLUTION: In a negative electrode for an electron tube provided with a negative electrode substrate in which electron emitting substrate 12 is impregnated, a negative electrode sleeve having the negative electrode substrate at an end part of it, and a heater to heat the negative electrode substrate, a thin film layer 13 including scandium and high fusion point metal, or a thin film layer 13 containing metal scandium or scandium compound formed by sputtering in a reducing atmosphere is formed on an electron emitting surface of the negative electrode substrate.</p> |
申请公布号 |
JPH11195367(A) |
申请公布日期 |
1999.07.21 |
申请号 |
JP19980000763 |
申请日期 |
1998.01.06 |
申请人 |
TOSHIBA CORP |
发明人 |
UDA EIICHIRO;HONMA KATSUHISA;NAKAMURA OSAMU;KOYAMA KIYOMI;HIGUCHI TOSHIHARU;MATSUMOTO SADAO;OUCHI YOSHIAKI |
分类号 |
H01J1/28;H01J9/00;H01J9/04;(IPC1-7):H01J1/28 |
主分类号 |
H01J1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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