发明名称 IMPREGNATED NEGATIVE ELECTRODE STRUCTURE, MANUFACTURE THEREOF, ELECTRON GUN STRUCTURE, AND ELECTRON TUBE
摘要 <p>PROBLEM TO BE SOLVED: To provide a impregnated negative electrode structure capable of conducting low temperature operation and high current density operation, of a long service life, and of a fast surface scandium concentration restoration time after an ion bombardment. SOLUTION: In a negative electrode for an electron tube provided with a negative electrode substrate in which electron emitting substrate 12 is impregnated, a negative electrode sleeve having the negative electrode substrate at an end part of it, and a heater to heat the negative electrode substrate, a thin film layer 13 including scandium and high fusion point metal, or a thin film layer 13 containing metal scandium or scandium compound formed by sputtering in a reducing atmosphere is formed on an electron emitting surface of the negative electrode substrate.</p>
申请公布号 JPH11195367(A) 申请公布日期 1999.07.21
申请号 JP19980000763 申请日期 1998.01.06
申请人 TOSHIBA CORP 发明人 UDA EIICHIRO;HONMA KATSUHISA;NAKAMURA OSAMU;KOYAMA KIYOMI;HIGUCHI TOSHIHARU;MATSUMOTO SADAO;OUCHI YOSHIAKI
分类号 H01J1/28;H01J9/00;H01J9/04;(IPC1-7):H01J1/28 主分类号 H01J1/28
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