ELECTRONIC DEVICE INCLUDING PEROVSKITE-TYPE OXIDE FILM, MANUFACTURE THEREOF AND FERROELECTRIC CAPACITOR

摘要

PROBLEM TO BE SOLVED: To form a perovskite-type oxide film in two-stage process by forming an amorphous SrRO3 film through sputtering on the main surface of a substrate wafer, performing polycaystalline formation, performing heat treatment for Pb(Zr, Ti)O3 formed by a sol-gel method at crystallization temperature, thereby providing the laminated structure of PZT thin films in polycrystalline pattern. SOLUTION: On an SiO2 film 2 formed by thermal oxidation of the surface of a silicon substrate 1, a Ti film 3 is formed through sputtering a Ti target in Ar-gas atmosphere. On lower Pt film 4, a lower SRO film 5 is formed by RF magnetron sputtering. The amorphous SRO film is made into a polycrystalline pattern through heat treatment. Then, a PTZ film 6 is formed on the SRO film 5 by a sol-gel method. An upper SRO film, an upper Pt film 8 and the surrounding parts thereof are covered with a resist pattern, the PTZ film 6 is etched, a part of the lower SRO film 5 is exposed, and the ferroelectric capacitor having the SRO/PTZ/SRO structure is obtained.