| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing short- circuiting between a capacitive contact and a gate to improve its yield, while avoiding a redundant pattern and increase in the number of excessive processes. SOLUTION: A position of a gate 14 at the outermost end one of memory cell regions 22 is made wider than an interval between gates 13 of each of the regions 22 which are other than the outermost end one. The position of the gate 14 of the region 22 located at the outermost end is positioned at the outermost end of the regions 22. |
