| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit device having at least one capacitor, which can be manufactured with a very high mounting density. SOLUTION: A capacitor is provided on a first substrate 1, and a circuit device having contacts K is provided on a second substrate 2. The first and the second substrates 1 and 2 are jointed together so that the contacts K are located adjacent to the capacitor. When part capacitors are provided on the first substrate 1 and a contact surface KF of the contact K is set to have such a size, that the contacts K necessarily defining the capacitor are contacted with at least one of the part capacitors at the time of jointing the substrates 1 and 2, the jointing of the first and the second substrates 1 and 2 can be carried out substantially without adjustment. The capacitor may include a plurality of part capacitors to thereby become a very large capacitance. The circuit device is set particularly to be a DRAM cell device. |
