| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for creating mask pattern data which perform precise pattern exposure on a spherical semiconductor. SOLUTION: An exposure apparatus which consists of a light source 2 for irradiating light, a collimator lens 4, a spatial filter 5 arranged at the focus of the collimator lens 4, a rotary ellipsoidal mirror 6 wherein the spatial filter 5 is arranged to coincide with a first focus f1, and a spherical semiconductor 10 is arranged at a second focus f2. A mask 3 arranged between the collimator lens 4 and the light source 2 is made a subject of simulation, a point light source 12 is set at the second focus f2, together a pattern is set on the spherical semiconductor 10, and a light beam from the point light source 12 is reversely traced towards the mask 3. A simulation wherein the above pattern is projected reversely on the mask 3 is performed, and the pattern of the mask 3 is generated based on the determined reverse projection data of the above pattern of the mask 3. |
