| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, including multibank memories which can stably operate at high speed without causing increase in chip occupying area. SOLUTION: Sub-banks 4a to 4b are located in four division areas of a rectangular DRAM macro-cell 3, bank control circuits 7a and 7b are located in a predetermined region 10 between the sub-banks 4a to 4d, and interval read/write data buses 5a and 5b are provided in a region different from the region of provision of the bank control circuits 7a and 7b. No intersection exists between the bank control circuits 7a, 7b and read/write data buses 5a, 5b, the bank control circuits 7a and 7b are efficiently located to reduce its layout area. |
