发明名称 FERROELECTRIC THIN FILM AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a dense ferroelectric thin film which is grainless, in a film thickness direction. SOLUTION: A ferroelectric thin film comprises a burned laminate 10. The laminate 10 includes a Bi seed layer 11 and a Bi-contained ferroelectric layer 13 provided, making contact with the layer 11. In the layer 13, crystallization is advanced by burning from the side of the layer 13 which makes contact with the layer 11. For this reason, the laminate 10 becomes mono-crystal in the film thickness direction. As a result, the ferroelectric thin film (burned laminate 10) turns grainless and dense in the film thickness direction.
申请公布号 JPH11195765(A) 申请公布日期 1999.07.21
申请号 JP19980001281 申请日期 1998.01.07
申请人 OKI ELECTRIC IND CO LTD 发明人 KOIWA ICHIRO;OKADA YUKIHISA;KANEHARA TAKAO;KATOU HIROYO
分类号 C01G29/00;H01B3/12;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792 主分类号 C01G29/00
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