| 摘要 |
PROBLEM TO BE SOLVED: To achieve contacting of a silicon nitride film of stoichiometric texture and polycrystalline silicon by providing a three-layer structure of a silicon nitride film, an oxidized nitride film and a nitride film for a dielectric film in a semiconductor device having a capacitor, which is constituted of a lower electrode from the polystalline silicon film, the dielectric film and an upper electrode of the polystalline silicon film. SOLUTION: On a P-type silicon substrate 1, a gate insulating film 2 having an opening part is formed. An interlayer insulating film 5A with a word line 3 and a sidewall 5B are formed thereon. Then, an N<+> -region 4 which becomes source-drain(S/D) is formed at the silicon substrate 1 at the opening part. A lower electrode comprising a polystalline silicon film 6 is formed thereon. Then, the silicon substrate 1 is heated in ammonium atmosphere by the use of quick thermal nitriding device. A silicon nitride film is formed on the surface of the polystalline silicon film 6, wherein phosphorus is doped in high concentration. Then, the oppositely facing upper electrode, the bit line and the like are formed, and a DRAM cell is completed. |
