| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a capacitor electrode, in which an electrode can use such a material as to cause substantial less increase of thickness of an insulating layer due to the oxidization of a storage node electrode itself even a heat treatment in steps of manufacturing the semiconduc tor device is carried out at a temperature of 700 deg.C or more. SOLUTION: The semiconductor device includes a capacitor part which has at least a tantalum oxide film as a capacitive insulating film 15 and a storage node electrode 14 contacted with the tantalum oxide film. In this case, the storage node electrode 14 is made of preferably tungsten nitride containing 0.7-40% of concentration of silicon. |
