| 摘要 |
The invention relates to a non-volatile memory cell and a manufacturing process therefor. The cell (1,10) is integrated in a semiconductor substrate (2) and comprises: a floating gate transistor (3,30) having a first source region (17,170), first drain region (15,150), and gate region (5,50) projecting over the substrate (2) and intervening between the first source and drain regions (17,15;170,150); and a selection transistor (4,40) having a second source region (19,190), second drain region (20,200), and respective gate region (23,230), projecting over the substrate (2), between the second source and drain regions (19,20;190,200). The first and second regions are lightly doped and the cell comprises mask elements (31a, 310a). <IMAGE> |
