| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce variance in characteristics of the thin film transistor for pixel electrode driving. SOLUTION: This thin film transistor has a gate electrode 2 formed on a glass substrate 1, a gate insulating film 3 which is formed covering the gate electrode 2, a silicon semiconductor layer 4 which is formed on the gate insulating film 3 across the gate electrode 2, and wiring electrodes 7S and 7D which wire the gate electrode 2 and semiconductor layer 4. To manufacture this thin film transistor, a metal film BL is formed covering the semiconductor layer 4 so as to stop impurities from being diffused as a transparent conductive film 6X is deposited and also etched away simultaneously with the patterning of the transparent conductive film 6X except a part as the pixel electrode 6.</p> |
