| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low-resistivity ITO film and to form a distinct etching pattern on a large-area substrate with a short tact time by wet-etching an ITO film in contact with an N-type silicon semiconductor layer formed by sputtering in a specified pattern, then heating or oxidizing the ITO film. SOLUTION: An oxide conductive film is formed on an insulating substrate by sputtering. At this time, the substrate is kept at room temp. to a low temp. of 100 deg.C. Consequently, the standby time needed in the vapor-deposition and sputtering devices, etc., is remarkably shortened. A resist pattern is then formed on the oxide conductive film and wet-etched, however the etching speed is extremely high since the oxide conductive film is of a half oxide. As a result, the HCl at room temp. is sufficiently used as the etchant, and an extremely beautiful etched pattern is obtained. When the oxide conductive film is then let stand in a high-temp. furnace, the oxidation of the film is promoted, and the resistivity is decreased to <=1.0×10<-3> . |
