| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an information writing method for EEPROM which can reduce miswriting (soft writing) to an unselected memory cell connected to a select word line. SOLUTION: This information writing method for NAND type flash EEPROM adopting a boot system for miswriting to an unselected memory cell electrically disconnects one of the channel area of the unselected memory cell connected to the select word line and the channel area of another unselected memory cell adjacent to a source line side or data line side and writes information to the selected memory cell. The information writing operation starts at entire batch information writing operation (EMOS implementation) and the information is written to the memory cell from the data line side to the source line side (EMOS implementation). When the information is written to the selected memory cell, all memory cells (memory cells of one page) connected to the select word line have their information erased at a time (DMOS implementation).</p> |
