发明名称 METAL FILM FORMING METHOD, OXIDE FILM FORMING METHOD AND MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To make the surface of a patterned metal film smooth and uniform always in quality in a metal film forming method wherein a patterned metal film is formed by etching, and a resist film is improved in releasability by ashing. SOLUTION: A metal film 6 is formed on a substrate 4a, then a resist 7 of prescribed pattern is formed, the metal film 6 is etched into a patterned metal film 6a using the resist 7 as a mask, the resist is subjected to ashing in an oxygen atmosphere and then separated off, and the patterned metal film 6a is formed on the substrate 4a. In this case, a surface stabilizing process where the etched metal film 6a is exposed to a gaseous atmosphere which contains fluorine ions is provided between an etching process and an ashing process.</p>
申请公布号 JPH11195642(A) 申请公布日期 1999.07.21
申请号 JP19970361563 申请日期 1997.12.26
申请人 SEIKO EPSON CORP 发明人 NAONO HIDEAKI
分类号 G02F1/136;G02F1/1368;H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/306;H01L21/321 主分类号 G02F1/136
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