发明名称 SEMICONDUCTOR STRAIN SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor strain sensor having a simple structure and the epitaxial layer region of which is not stained. SOLUTION: A thin strain start section A covers bottom face of a surface- layer region (epitaxial layer region) 31 having a piezoresistance region R and has a covering region 4 exposed on the side of an anti-piezoresistance region. The covering region 4 protects the surface-layer region 31 and the interface of the P-N junction between the surface-layer region 31 and a semiconductor substrate 2 from stains and minute scratches. In order to accurately form the covering region 4 with a sufficient thickness, the etching voltage applied across an electrode faces opposite to the substrate 2 and the surface-layer region 31 is controlled.
申请公布号 JPH11195793(A) 申请公布日期 1999.07.21
申请号 JP19980293990 申请日期 1998.10.15
申请人 DENSO CORP 发明人 FUKADA TAKESHI;YOSHINO YOSHI;SUGITO YASUNARI;SAKAI MINEICHI
分类号 G01L9/04;G01L9/00;H01L21/3063;H01L29/84;(IPC1-7):H01L29/84;H01L21/306 主分类号 G01L9/04
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