| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stably forming a contact hole. SOLUTION: A stopper film 9a is provided on a gate electrode 4, and an inter-layer insulation film 5 is provided on a semiconductor substrate 1 so as to cover the gate electrode 4. A first contact hole 6a for exposing the surface of the gate electrode 4 is passed through the inter-layer insulation film 5 and the stopper film 9a, and a second contact hole 6b for exposing the surface of an impurity diffused layer 3 is provided in the inter-layer insulation film 5. The stopper film 9a is formed by a material of etching selection ratio higher than that of the inter-layer insulation film 5. |
