发明名称 |
Phosphorous doping a semiconductor particle |
摘要 |
A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.
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申请公布号 |
US5926727(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19950570028 |
申请日期 |
1995.12.11 |
申请人 |
STEVENS, GARY DON;REYNOLDS, JEFFREY SCOTT |
发明人 |
STEVENS, GARY DON;REYNOLDS, JEFFREY SCOTT |
分类号 |
C30B31/02;C30B31/08;H01L21/225;H01L31/0288;H01L31/0352;(IPC1-7):H01L21/22 |
主分类号 |
C30B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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