Semiconductor memory device with data scramble circuit

摘要

The semiconductor memory device of the present invention comprises a mode setting means for setting the test mode; a circuit for transferring data provided to one of the input/output pins in a group of a given number of input/output pins to each of the rest of the group when the test mode is set; a circuit provided for each input/output pin which, when the test mode is set, selectively inverting the data signal values provided to the input/output pins or retrieved from the memory cells so that the order of the specified logical addresses coincides with the order of the physical addresses of the memory cells; and a circuit for deciding whether or not the data reading operation has been properly performed from the data retrieved from the memory cells to the given number of input/output pins and for sending out a signal indicating the decision to one of the input/output pins in the group of the given number of input/output pins.