发明名称 |
Semiconductor processing method of providing electrical isolation between adjacent semiconductor diffusion regions of different field effect transistors and integrated circuitry having adjacent electrically isolated field effect transistors |
摘要 |
Integrated circuitry having adjacent electrically isolated field effect transistors is disclosed and which includes a bulk semiconductor substrate; an electrically insulative device isolation mass located on the substrate and positioned between opposing active area regions; a first pair of LDD diffusion regions associated with the active area and abutting against the electrically insulative device isolation mass; a pair of field effect transistors each being received within one active area; a second paid of LDD diffusion regions associated with the active area and abutting against each field effect transistor; and a pair of electrically conductive transistor source and drain diffusion regions which are respectively spaced from the insulative isolation mass and field effect transistor.
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申请公布号 |
US5925916(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19980100522 |
申请日期 |
1998.06.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DOAN, TRUNG TRI;DENNISON, CHARLES H. |
分类号 |
H01L21/266;H01L21/336;H01L21/762;H01L21/765;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L3/113 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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