发明名称 |
Laser irradiation method |
摘要 |
In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.
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申请公布号 |
US5925421(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19960728409 |
申请日期 |
1996.10.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;KUSUMOTO, NAOTO |
分类号 |
C23C16/44;C30B1/02;C30B13/24;C30B31/20;(IPC1-7):C23C14/02 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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