| 摘要 |
A method of producing a bipolar transistor composed of collector, base and emitter regions disposed sequentially on a semiconductor substrate. According to the method, a semiconductor layer is deposited on the collector region, the semiconductor layer is cleaned to expose an active surface, an impurity source gas is applied to the exposed active surface while heating the substrate to form an impurity adsorption layer, the impurity is diffused into the semiconductor layer to form the base region, another semiconductor layer is deposited on the base region, this semiconductor layer is cleaned to expose an active surface, another impurity source gas is applied to the exposed active surface while heating the substrate to form another impurity adsorption layer, and impurity is diffused into the semiconductor layer to from the impurity adsorption layer to form the emitter region.
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