发明名称 |
Semiconductor on insulator devices |
摘要 |
A pair of complementary MOSFET's having regions of a common conductivity type separating the source and drain regions thereof which are provided on a support structure formed of an electrical insulating layer on a semiconductor material base. MOSFET's has a gate oxide layer on which is provided a gate semiconductor structure, with these structures each being of a common conductivity type and located across the gate oxide layers from the corresponding common conductivity type region.
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申请公布号 |
US5925915(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19940251011 |
申请日期 |
1994.05.31 |
申请人 |
HONEYWELL INC. |
发明人 |
LIU, MICHAEL S.;LAI, JAMES C. |
分类号 |
H01L27/12;(IPC1-7):H01L27/01;H01L29/76 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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