Microwave plasma processing method for preventing the production of etch residue

摘要

A microwave plasma processing method capable of processing an object layer having a minute configuration and a laminated object layer without producing any etch residue and of increasing the ratio of the etching selectivity of the object layer to those of a mask and an underlying layer when etching a laminated film. To achieve this, the intensity of a magnetic field created by solenoids surrounding a plasma processing chamber is varied to vary the distance between the object surface of a workpiece and a flat resonance region for etching an object layer and for overetching the object layer to vary the position of a plasma produced by the interaction of an electric field created by a microwave and the magnetic field created by the solenoids according to the layers being processed.