| 摘要 |
A thin film diamond coating and substrate composite is treated in a low temperature plasma processing system with an oxidizing gaseous element. During the treatment, the oxidative plasma reacts with graphitic surface carbon, resulting in volatile surface molecules which are pumped off' the diamond; and oxygen in the plasma bonds to diamond carbon to terminate the diamond thin film coating surface. The process results in a thin film diamond coating having increased resistivity (to at least approximately 101.degree. ohm-cm). An integrated circuit (IC) package is also provided in which the chip is mounted on a thermally conductive, yet electrically resistive base comprised of a substrate coated with a diamond thin film coating treated according to the above described process of the invention. Leads are provided in thermal contact with the base, but, due to the electrical resistivity of the base, are electrically insulated from the chip. Wires between pads on the leads and the chip provide the electrical connection. The leads provide a direct conduit for thermal dissipation. The IC package permits increased heat dissipation from the entire package in a manner which does not interfere with its electrical properties and is less expensive to manufacture. |
