| 发明名称 |
A novel approach to optimizing an ild argon sputter process |
| 摘要 |
A sputter etch system and a method of conducting a sputter etch. The sputter etch system includes an etch chamber with a wafer pedestal having a top surface to support a wafer and a magnet configured to provide a continuous magnetic field directed at the top surface of the wafer pedestal. |
| 申请公布号 |
AU1616399(A) |
申请公布日期 |
1999.07.19 |
| 申请号 |
AU19990016163 |
申请日期 |
1998.12.01 |
| 申请人 |
INTEL CORPORATTION |
发明人 |
BRETT E. HUFF;KEN SCHATZ;MIKE MAXIM;WILLIAM G. PETRO |
| 分类号 |
H01J37/34;H01L21/311;H01L21/762 |
主分类号 |
H01J37/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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