| 摘要 |
A method of etching and cleaning comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an interhalogen etchant compound having a formula selected from ClF, ClF3, BrF3, BrF5, IF7 and IF5; and including a composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching. |
