INTEGRATED CMOS TRANSISTOR FORMATION

摘要

A semiconductor device having a source and drain including indium ions is formed by implanting the source and drain with indium ions. Implanting can be done in two steps. The first implant is used to form a lightly doped drain and source. Spacers are then placed on the sidewalls of the gate. A second implant is used to form a heavily doped drain and source region. The structure is then anealled to repair the crystalline structure and activate the device. The source and drain then feature graded doping. The semiconductor device is termed a PMOSFET. This device can be used as part of a CMOS device. In a CMOS device the semiconductor device having a source and drain including indium ions is formed by implanting the source and drain with indium ions is placed near a NMOSFET. These devices are used in information handling systems.