| 摘要 |
<p>A semiconductor device comprising an insulating film which is a fluorine-added carbon film formed on a substrate, a metal layer formed on the fluorine-added carbon film, and a strong adherence layer formed between the insulating film and the metal layer. The strong adherence layer is made of a compound containing carbon and the metal (the same metal contained in the metal layer), and prevents the metal layer from separating from the fluorine-added carbon film.</p> |
