| 摘要 |
A ferroelectric memory using residual polarization of a ferroelectric film. The memory includes a semiconductor substrate of one conductive type; a write transistor having a source region and a drain region of another conductive type formed at a surface of the semiconductor substrate; a read transistor having a source region and a drain region of another conductive type formed at the surface of the semiconductor substrate; and a storage transistor having a source region and a drain region of one conductive type at the surface of the semiconductor substrate. One source or drain region of the write transistor is connected to a gate electrode of the storage transistor, and one source or drain region of the storage transistor is connected to one source or drain region of the read transistor so as to provide a memory cell. A write or erase operation is performed by inducing polarization in the ferroelectric film through applying a predetermined voltage between the well region and the gate electrode of the storage transistor, and a read operation is performed by detecting a drain current for the storage transistor through the read transistor generated in accordance with the residual polarization. |
