发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
According to this invention, an etching stopper film constituted by a silicon nitride film is stacked on an insulating film constituted by a silicon oxide film for protecting a wiring to prevent damage to the wiring caused by anisotropic dry etching for forming a contact hole. A resist pattern having the same shape as that of the contact hole is formed by using a reflection prevention film containing nitrogen atoms, the etching stopper film and the reflection prevention film in a contact hole formation region which contain nitrogen atoms and have equal selectivity ratios under a predetermined condition are simultaneously removed by etching, so that a semiconductor device having stable performance and simple manufacturing steps can be obtained. |
申请公布号 |
KR100207302(B1) |
申请公布日期 |
1999.07.15 |
申请号 |
KR19960029676 |
申请日期 |
1996.07.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUMOTO, JYUNKO;SAKAMORI, SIGENORI |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/60;H01L21/768;H01L23/485;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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