| 摘要 |
<p>This paper discusses the novel use of low energy boron (B) implants for doping of the P+ poly gate and S/D regions. Using low energy B, penetration through SiO2 is reduced to a negligible level as compared to BF2, and is attributed to the absence of fluorine. Enhanced B diffusion in silicon is observed with low energy B implants which can be controlled with either a lower S/D RTA temperature or a co-implanted B/BF2 junction containing a small fraction of BF2. Low energy B implants are an attractive, highly manufacturable alternative to nitrided gate oxides for dual gate 0.25 νm and 0.18 νm CMOS technologies.</p> |
