| 摘要 |
<p>A CVD method by which a titanium film having stable contact resistance and a satisfactory homology of the interface between the film and a silicon substrate can be formed. The method comprises feeding a film-forming gas containing TiCl4 gas to a contact hole (46) at the bottom of which a silicon substrate (41) having an autoxidized silicon film (50) is present to form a titanium film on the silicon substrate (41) by CVD to thereby form a TiSi2 layer (51) on the silicon substrate (41).</p> |
