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发明名称
METHOD OF FABRICATING BI-MOS
摘要
申请公布号
KR100209765(B1)
申请公布日期
1999.07.15
申请号
KR19910009641
申请日期
1991.06.12
申请人
HYUNDAI MICRO ELECTRONICS CO.,LTD.
发明人
JUNG, CHUL-HEE
分类号
H01L21/328;(IPC1-7):H01L21/328
主分类号
H01L21/328
代理机构
代理人
主权项
地址
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