发明名称 Improved silica stain test structures and methods therefor
摘要 A method for forming silica stain on a substrate to facilitate monitoring of the silica stain during integrated circuit manufacture. The method includes providing a silica stain test structure which has a silicon substrate, a hydrophilic silicon dioxide containing layer disposed above the silicon substrate, and a plurality of cavities formed in the silicon dioxide containing layer. The cavities have hydrophobic sidewalls. The method also includes exposing the silica stain test structure to deionized water, and drying the silica stain test structure to form the silica stain on the silicon dioxide containing layer. <IMAGE>
申请公布号 EP0887852(A3) 申请公布日期 1999.07.14
申请号 EP19980305008 申请日期 1998.06.25
申请人 SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ARNDT, RUSS;HOYER, RONALD;COHEN, SUSAN;SNAVELY, COLLEEN
分类号 G01N21/88;G01N21/93;G01N21/956;H01L21/304;H01L21/306;H01L21/66;H01L23/544;H01L27/10 主分类号 G01N21/88
代理机构 代理人
主权项
地址