CONTROLLED AMINE POISONING FOR DECREASING CONTRACTION OF IMAGE FORMED IN PHOTORESIST

摘要

PROBLEM TO BE SOLVED: To reduce contraction of a photoresist image between photostabilization and image formation by exposing the photoresist to a material selected from the group consisting of a kind of amine and a kind of amide and a kind of aldehyde and nitrogen. SOLUTION: The contraction of a lithographic image formed on the photoresist is reduced by exposing the image to at least one kind of material selected from the group consisting of a kind of amine and a kind of amide and a kind of aldehyde and nitrogen for about 10-300 sec. The lithographic image is formed by disclosing the photoresist on the surface of a semiconductor water to radiation in a prescribed wavelength or radiation sufficient for changing the solubility characteristics in the method for forming a semiconductor chip device.