| 发明名称 |
Methods, complexes, and system for forming metal-containing films |
| 摘要 |
A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
|
| 申请公布号 |
US5924012(A) |
申请公布日期 |
1999.07.13 |
| 申请号 |
US19960725064 |
申请日期 |
1996.10.02 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA, BRIAN A. |
| 分类号 |
C07F5/00;C07F5/06;C23C16/18;C23C16/30;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C07F5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
