发明名称 |
Controllable semiconductor component |
摘要 |
PCT No. PCT/EP95/03742 Sec. 371 Date Mar. 21, 1997 Sec. 102(e) Date Mar. 21, 1997 PCT Filed Sep. 22, 1995 PCT Pub. No. WO96/09649 PCT Pub. Date Mar. 28, 1996The invention concerns a semiconductor component which can be controlled on the anode side and whose semiconductor body comprises a plurality of adjacent, parallel-connected unit cells having a thyristor structure. A lightly doped n-base region (3) is adjoined on both sides by highly doped p-regions constituting p-base region (2) and p-emitter region (4). The p-base region (2) is followed by a highly doped n-emitter (1) which contacts a cathode electrode (7). Integrated in the p-emitter region (4) is a first n-channel MOSFET (M1) which is connected in series with the thyristor structure by means of a floating electrode (FE). The drain electrode (5b) of the first MOSFET (M1) is provided with an outer anode (8) which has no contact with the p-emitter region (4). A second n-channel MOSFET (M2) is integrated between the n-base region (3) and the drain region (5b) of the first MOSFET (M1).
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申请公布号 |
US5923055(A) |
申请公布日期 |
1999.07.13 |
申请号 |
US19970809848 |
申请日期 |
1997.03.21 |
申请人 |
DAIMLER-BENZ AKTIENGESELLSCHAFT |
发明人 |
SCHLANGENOTTO, HEINRICH;FUELLMANN, MARIUS;KOREC, JACEK;BODENSOHN, ALEXANDER |
分类号 |
H01L29/74;H01L27/04;H01L29/08;H01L29/739;H01L29/747;H01L29/749;H01L29/78;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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