| 摘要 |
PROBLEM TO BE SOLVED: To realize a high-efficiency and highly reliable nitride semiconductor device, capable of being used for a laser element, an light-emitting diode(LED) element, a light-receiving element and the like, for example, by a method wherein a nitride semi conductor layer having few crystal defects is used as a base layer. SOLUTION: In this element, a nitride semiconductor layer comprising an active layer 52 is grown on a base layer 50, which has a region having few crystal detects and a region having many crystal defects and consists of a nitride semiconductor layer, and the area of the active layer 52 grown on the region, which has the few crystal defects, on the upper part of the layer 50, is formed wider than that of the active layer grown on the region, which has the many crystal defects on the upper part of the layer 50. Or the element has a laser oscillation region on the upper part of a base layer 50, which has a region having many crystal defects and a region having few crystal defects and consists of a nitride semiconductor layer, and the laser oscillation region is provided on the region, which has the few crystal defects on the upper part of the layer 50. As a result of these constitutions, since the crystal defects are not transformed to the active region of the element, a long-lived element is obtained. |
