发明名称 |
Double density V nonvolatile memory cell |
摘要 |
Floating gates of nonvolatile memory cells are formed in pairs within a pyramidal or truncated pyramidal opening in a semiconductor layer between a top surface thereof and a heavily doped source region spaced from the surface of the semiconductor layer. The floating gates control the conductance of channel regions formed along the sloped sidewalls of the pyramidal openings between surface drains and the buried source region.
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申请公布号 |
US5923063(A) |
申请公布日期 |
1999.07.13 |
申请号 |
US19980026358 |
申请日期 |
1998.02.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIU, YOWJUANG W.;WOLLESEN, DONALD L.;YUE, JOHN T. |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):H01L29/76;H01L29/88;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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