SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate with which the deterioration of characteristics of an epitaxial layer to be laminated can be prevented. SOLUTION: This semiconductor substrate is mirror-surface polished and has a surface of low Si density. The Si density is set such that the interface of the epitaxial layer/substrate is 8×10<17> cm<-3> or less, when the equitaxial layer is formed on the surface of the mirror-surface polished substrate. After the semiconductor substrate has been mirror-surface polished by the polishing material containing colloidal silica, the polishing material is removed by cleaning the substrate while pH is a range of 10.5 to 14 is maintained by an amine-based cleaning material.