| 发明名称 |
Method for semiconductor processing using mixtures of HF and carboxylic acid |
| 摘要 |
Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.
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| 申请公布号 |
US5922624(A) |
申请公布日期 |
1999.07.13 |
| 申请号 |
US19960772338 |
申请日期 |
1996.12.23 |
| 申请人 |
IMEC VZW;ADVANCED SEMICONDUCTOR MAT |
发明人 |
VERHAVERBEKE, STEVEN;HEYNS, MARK;HENDRIKS, MENSO;DE BLANK, RENE |
| 分类号 |
H01L21/306;H01L21/311;(IPC1-7):C03C15/00;B44C1/22 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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