发明名称 PLASMA CVD APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain a plasma CVD apparatus in which an insulating member can be covered up to a complicated part and which surely prevents an abnormal discharge, by a method wherein a thermosetting polyimide or thermosetting polybenzimidazole insulating film is formed in a corner part on the inner wall surface of a reaction vessel formed of a noninsulating member. SOLUTION: A reaction vessel 10 is constituted in such a way that its base material is formed of a noninsulating metal such as aluminum or the like, that a film 10a which is formed of an insulating resin to be a prescribed thickness (e.g. 30μm or higher) is formed on the whole face of its inner wall which is exposed to a plasma, and that an abnormal discharge is prevented in a plasma discharge. Shutters 21, 31 are formed of a sheet body which uses a noninsulating metal as a base material, and insulating resin films 10a are formed on their main surfaces on sides exposed to a plasma. As the resin, a thermosetting polyimide resin or a thermosetting polybenzimidazole resin is suitable. The resin is featured in such a way that its mass change at a high temperature is extremely small, that its chemical heat resistance is excellent, and that its glass transition point is higher than a general reaction temperature.
申请公布号 JPH11191555(A) 申请公布日期 1999.07.13
申请号 JP19970358855 申请日期 1997.12.26
申请人 GUNZE LTD 发明人 NISHIURA NAOKI;KAWAHARA TAICHI
分类号 C23C16/44;C23C16/50;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 主分类号 C23C16/44
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