Sputtering apparatus for forming a conductive film in a contact hole of a high aspect ratio

摘要

A sputtering apparatus contains a sputtering reaction chamber. A target is provided in the sputtering reaction chamber. A shielding plate is provided in the vicinity of the target. An emitter is electrically connected to the shielding plate for causing ionized sputter-particles and neutral sputter-particles to be emitted from the target and dropped at various angles into an under-space positioned under the target and in the sputtering reaction chamber. A substrate holder is provided in the sputtering reaction chamber. The substrate holder is laterally distanced from the under-space for holding a substrate so that a surface of the substrate is vertical. A generator is provided for generating a static field in a lateral direction to be applied across a laterally extending space which includes the substrate holder and the under-space so that the static field does laterally accelerate only the ionized sputter-particles toward the substrate held by the substrate holder for a lateral deposition of the ionized sputter-particles onto the surface of the substrate.