发明名称 Method for characterizing defects on semiconductor wafers
摘要 A method is described for characterizing defects on a test surface of a semiconductor wafer using a confocal-microscope-based automatic defect characterization (ADC) system. The surface to be tested and a reference surface are scanned using a confocal microscope to obtain three-dimensional images of the test and reference surfaces. The test and reference images are converted into sets of geometric constructs, or "primitives," that are used to approximate features of the images. Next, the sets of test and reference primitives are compared to determine whether the set of test primitives is different from the set of reference primitives. If such a difference exists, then the difference data is used to generate defect parameters, which are then compared to a knowledge base of defect reference data. Based on this comparison, the ADC system characterizes the defect and estimates a degree of confidence in the characterization.
申请公布号 US5923430(A) 申请公布日期 1999.07.13
申请号 US19970794673 申请日期 1997.02.03
申请人 发明人
分类号 G01N21/94;G01N21/95;G01N21/956;G01R31/311;G02B21/00;(IPC1-7):G01N21/88 主分类号 G01N21/94
代理机构 代理人
主权项
地址