发明名称 Pattern transfer mask, mask inspection method and a mask inspection apparatus
摘要 A mask inspection apparatus of the present invention includes an electron gun for irradiating an electron beam onto a mask with a pattern formed thereon, an electron lens for magnifying an electro-optic mask image passed through the mask, a fluorescent screen for converting the magnified electro-optic mask image to an optical mask image, an optical lens for optically magnifying the optical mask image, a detector for detecting the magnified optical mask image, and a comparator for inspection a defect in the pattern on the basis of the image. By doing so, it is possible to suppress aberrations resulting from the electro-optic magnification and, in addition, inspect the pattern with a high resolution through optical magnification. It is also possible to inspect the mask at its area and to inspect a defect at high speeds.
申请公布号 US5923034(A) 申请公布日期 1999.07.13
申请号 US19970950802 申请日期 1997.10.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGASAWARA, MUNEHIRO;MUROOKA, KEN-ICHI
分类号 G01B11/24;G01B15/00;G01B15/04;G01N23/18;G03F1/16;G03F1/20;G03F1/84;G03F1/86;H01J37/26;H01L21/027;(IPC1-7):H01J37/256 主分类号 G01B11/24
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